GAA is somehow similar to FinFETs except the conducting channel is surrounded by gate all around. Thus we get better gate controllability over the channel. The channel shape can be square or any other polygon shape.

CMOS technology uses both NMOS and PMOS transistors, The transistors are arranged in a structure formed by two complementary networks. Bulk CMOS is a chip built on a standard silicon wafer.

In 1965, Gorden Moore in his paper predicted that how number of transistors in integrated circuit get double in every 18 month. Even though in 1990, a new type of substrate named SOI (Silicon-on-insulator) was introduced which improved the speed and power consumption, the first integrated circuit transistor was fabricated on “Bulk” silicon wafers.

Silicon on insulator (SOI) refers to the use of a three layered substrate in place of conventional bulk silicon substrates. A thin layer of silicon is placed on top of an insulator such as silicon dioxide (SiO2) also known as a buried oxide layer.

What are FinFETs?FinFETs are non-planar transistors built on SOI or Bulk substrate. FinFET describes any fin-based, multi-gate transistor architecture, regardless of the number of gates.